Using physical methods to create photosensitive structures based on CdSe nanoparticles and CNTs
O.A.H. Hassoon1,2,*, O.N.S. Salman3, V.N. Mironyuk2, M.V. Pozharov2, A.M. Zakharevich2, E.G. Glukhovskoy2
1 Ministry of Iraqi electricity, Baghdad, +964, Iraq.
2 Saratov State University named after. N.G. Chernyshevsky, Saratov, 410004, Russia
3 University of Technology, Baghdad, +964, Iraq.
Abstract
The possibility of obtaining photosensitive structures by physical methods without the use of chemical synthesis methods and vacuum technology is shown. Suspensions of CdSe nanoparticles were obtained by pulsed laser ablation in a liquid (chloroform), and layers of semiconductor material (CdSe) and conductive layers (CNT) were formed at the gas-liquid interface and transferred to solid substrates by the Langmuir-Schaeffer method. The CdSe nanoparticles in the layers ranged in size from 60 to 200 nm, and the bandgap was 2.3 eV. Multilayer film structures consisting of a layer based on synthesized CdSe nanoparticles and a layer of conductive carbon nanotubes (CNTs) were obtained, which demonstrated photosensitivity in the optical range. The value of the photocurrent density was up to 1 and 1.14 mA/cm2 at a voltage of 1 V, applied in the "forward" and "reverse" directions, respectively. The increase in current under lighting was about 6 and 22 times - for "forward" and "reverse". Functional semiconductor materials have recently been found to exhibit specific electric and optoelectronic properties at the nanoscale, that has a significant impact on fields such as photonics, nanoelectronics, and optoelectronics. Nanomaterials are the most interesting, because of their thermoelectric and photovoltaic properties. In this work, we used the PLAL technique to produce CdSe nanoparticles.
Speaker
Oday
Engineer in Saratov State university
Iraq
Discussion
Ask question
