Integrated multilevel optical devices based on thin films of phase-change materials
Lazarenko P.I.1, Kovalyuk V.V.2, Pestova V.B.1,3 An P.P.2, Golikov A.D.2, Kitsyuk E.P.3, Sherchenkov A.A1, Kozyukhin S.A4, Goltsman G.N.2
1National Research University of Electronic Technology, Zelenograd, Russia
2Moscow State Pedagogical University, Moscow
3Scientific-Manufacturing Complex “Technological Centre”, Zelenograd,
4Kurnakov Institute of General and Inorganic Chemistry RAS, Moscow
Abstract
The further development of integrated-optical schemes and their application in computing technology necessitates the creation of photonics elements capable of providing multi-level control over optical signal parameters with minimal energy consumption. Of particular interest for addressing this challenge are functional phase-change materials (PCM), specifically thin Ge2Sb2Te5 (GST) films, which can alter their phase state due to thermal, laser, or electrical influences. The change in phase state is accompanied by significant alterations in the optical properties of the material, opening up broad prospects for their application in fully optical reconfigurable devices. Special attention is given to the application of GST in Si3N4-based elements operating in the telecommunications C-band near 1550 nm.
This work presents the results of the development, fabrication, and investigation of various components of photonic integrated circuits (PICs) fabricated based on a multilayer structure Si/SiO2/Si3N4 using thin GST films doped with Sn. The fabrication of PIC components was performed using electron-beam lithography.
It has been established that the introduction of Sn into GST leads to the effective substitution of Ge atoms and the formation of low-energy Sn-Te bonds, which is accompanied by an increase in the extinction coefficient and, consequently, a reduction in the threshold energies of laser crystallization processes. The dependencies of the influence of the GST functional area length on the parameters of fabricated ring resonators, Mach-Zehnder interferometers, and balanced signal dividers have been determined. The possibility of reversible information recording in the fabricated elements has been demonstrated, which opens up perspectives for their application in creating fully optical non-volatile memory.
This work was carried out in the laboratory "Materials and Devices of Active Photonics" with financial support from the Russian Science Foundation grant No. 23-91-06308 and the NPC "Technological Center".
Speaker
Пестова Виктория Борисовна
НИУ МИЭТ
Россия
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