Single-Wall Carbon Nanotube-Based Fresnel Zone Plate with Gate-Tunable Features for Terahertz Frequencies
Arina V. Radivon1, Gleb M. Katyba3, Nikita I. Raginov4, Aleksey V. Chernykh5, Aleksei S. Ezerskii5, Elizaveta G. Tsiplakova5, Ignat I. Rakov4, Maksim I. Paukov1, Vladimir V. Starchenko1, Aleksey V. Arsenin1, Igor E. Spector2, Kirill I. Zaytsev2, Dmitry V. Krasnikov4, Nikolay V. Petrov5,6, Albert G. Nasibulin4, Valentyn Volkov1, Aram A. Mkrtchyan4, Maria G. Burdanova1,3;
1Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia;
2Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia;
3Institute of Solid State Physics of the Russian Academy of Sciences, Chernogolovka, Russia;
4Skolkovo Institute of Science and Technology, Moscow, Russia;
5ITMO University, St. Petersburg, Russia;
6Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao, China
Abstract
Single-walled carbon nanotubes SWCNTs have shown unique terahertz (THz) properties, such as high and tunable conductivity, which make them promising candidates for the next generation of optoelectronic devices. Recently developed innovative approach of SWCNTs patterning allows for the creation of highly efficient optoelectronic components. In continue, we propose the design and implementation of Fresnel zone plates (FZPs) as tunable diffraction elements for applications within the terahertz frequency range. The feather dynamical control of the beam propagation can be archived thoughts electro-chemical doping.
In our experiments, we demonstrated the uniform modulation of SWCNT film optical properties using a combination of absorption, Raman and THz time-domain spectroscopy. A similar film was used for spectroscopy and fabrication of FZP. Our CNT film-based FZP with nanometer thickness shows an persistent intense focus accompanied by intensity tunability of 30% at 327 GHz with a variation of voltage from -2 to +2 V. The ability to control the optical properties of the Fresnel zone plates via gating presents exciting possibilities for the development of advanced terahertz devices.
These findings are of particular importance as they address the ongoing challenge of the limited availability of tunable devices operating at terahertz frequencies, which are highly sought after for various applications in imaging, sensing, and communication technologies. The successful implementation of SWCNT as FZP offers the possibility of using thin CNT films in a range of tunable THz devices.
Authors acknowledge the Russian Science Foundation project No. 24-79-00143 and ITMO-MIPT-Skoltech Clover initiative.
Speaker
Arina V. Radivon
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy lane, Dolgoprudny, 141701, Russia
Russia
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