Controllable air plasma treatment modification of the terahertz response of single-walled carbon nanotubes at both low and high fields
Maksim I. Paukov1, Arina V. Radivon1, Aleksey V. Chernykh2, Dmitry V. Krasnikov3, Emil O. Chiglintzev 1,4, Stanislav Kolar 1,4, Kirill A. Brekhov4,5, Gennagy A. Komandin6, Aleksandr I. Chernov1,4, Albert G. Nasibulin3, Valentyn Volkov7,8, Aleksey V. Arsenin7,8 and Maria G. Burdanova1,9;
1 - Moscow Center for Advanced Studies, Moscow, 123592, Russia;
2 - ITMO University, St. Petersburg, 191002, Russia;
3 - Skolkovo Institute of Science and Technology, Moscow, 121205, Russia;
4 - Russian Quantum Center, Moscow, 121205, Russia;
5 - Russian Technological University MIREA, Moscow, 119454, Russia;
6 - Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia;
7 - Emerging Technologies Research Center, XPANCEO, Dubai, 00000, United Arab Emirates;
8 - Laboratory of Advanced Functional Materials, Yerevan State University, Yerevan, 0025, Armenia;
9 - Osipyan Institute of Solid State Physics of the Russian Academy of Sciences, Chernogolovka, 142432, Russia
Abstract
The electrical and optical properties of single-walled carbon nanotube films treated with controlled oxygen defects were examined using low and high-field terahertz spectroscopy as well as conventional UV-Vis-NIR and MIR FTIR. The discrepancy between the spacing of defects identified through Raman analysis and the localization length observed through terahertz time-domain spectroscopy (TDS) was explained. Additionally, the frequency shift of the plasmon to higher frequencies based on the number of defects was found. Increasing the strength of the terahertz field resulted in a decrease in conductivity due to the redistribution of charge carriers under the applied electric field, a phenomenon described in the frames of the Boltzmann approach considering neutral and charged impurity scattering. Finally, a finite element model of a terahertz wire grid polarizer was developed based on the dielectric properties of defected CNT samples at different field strengths, offering valuable insights for creating THz devices with varying capabilities using CNTs with different levels of defects. Modelling took into account the geometry of the grid, and the variable conductivity depending on the number of defects in low and high THz fields.
Authors acknowledge the Russian Science Foundation project No. 24-79-00143 and ITMO-MIPT-Skoltech Clover initiative. TEM and XRD analyses were performed using the equipment of the Center of Shared Research Facilities (MIPT).
Speaker
Maksim I. Paukov
Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia
Russia
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