Optoelectronic Properties of Van der Waals Heterostructures based on borophene, GaN, ZnO, ReSe2 and ReS2 monolayers
Michael M. Slepchenkov1, Dmitry A. Kolosov1, Kirill R. Asanov1, Olga E. Glukhova1,2; 1Saratov State University, Saratov, Russia; 2I.M. Sechenov First Moscow State Medical University, Moscow, Russia
Abstract
The aim of this study is to analyze the influence of uniaxial and biaxial tension/compression deformation on the optical and optoelectronic properties of borophene/ReS2 borophene GaN and borophene ZnO van der Waals heterostructures.
Speaker
Michael M. Slepchenkov
Saratov State University
Russia
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Discussion
Egor Abarkin
What are the dimensions of the supercells of the heterostructures under study?
Michael M. Slepchenkov
The optimized values of the translation vectors of the supercell of the borophene/ReS2 heterostructure were Lx=6.485 ? and Ly=11.404 ?, for the borophene/ReSe2 heterostructure – Lx=6.553 ? and Ly=11.669 ?, for the borophene/GaN heterostructure they were Lx=10.05 ? and Ly =12.21 ?, for the borophene/ZnO heterostructure – Lx=9.83 ? and Ly=11.662 ?.
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