Dark and laser-mediated charge transfer in nanostructured semiconductors: the comparison of TiO2 and In2O3 platforms
Alexander F. Dorogov, 1, Sergey S. Volchkov, 1, Alexey S. Tokarev, 1, Dmitry V. Tsypin, 1, Dmitry A. Zimnyakov, 1,2; 1 Yuri Gagarin Saratov State Technical University, Saratov, Russia; 2 Institute of Precise Mechanics and Control RAS, Saratov, Russia
Abstract
Features of microscopic and macroscopic charge transfer in nanostructured dispersed semiconductor systems in the dark mode and under the action of pulse-periodic laser radiation were examined for thin (up to 1 micrometer) layers of close-packed and In2O3 nanoparticles. Laser irradiation was carried out at a wavelength of 355 nm (in the fundamental absorption band of both titanium oxide and indium oxide). Experimental studies of the dark conductivity of the examined layers under prolonged action of direct current showed the existence of a percolation threshold due to the depletion of ensembles of mobile charge carriers in the layers. Analysis of the rise-and-fall kinetics of photoinduced conductivity in the layers made it possible to estimate the effective values of the carrier concentration and mobility in the layers and presumably identify the mobility-controlling mechanisms for the layers of both TiO2 and In2O3 nanoparticles.
Speaker
Alexander F. Dorogov
Yuri Gagarin Saratov State Technical University, Saratov, Russia
Russia
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