Sapphire and oxide eutectic fibers grown by the EFG technique

Abstract

Single crystalline sapphire has a high melting point, chemical inertness, impressive hardness, radiation and mechanical strength, high thermal shock resistance, and thermal conductivity. Sapphire also has a high refractive index and a broad transmission band spanning the UV, visible, IR, THz, and microwave bands [1]. Such unique combination of physical and chemical properties makes sapphire an attractive material for various applications. Some oxide eutectic ceramics also are attracting attention as candidates for next-generation high-temperature applications [2].
High-quality single-crystalline (sapphire, yttrium-aluminum garnet) as well as eutectic double garnet-containing (Al2O3-Y3Al5O12, Al2O3-Er3Al5O12,) and perovskite-containing (Al2O3-GdAlO3) fibers with diameters from 150 μm was grown by multi-crystal growth process from the melt [3]. An automated control system for the process of growing oxide fibers from the melt has been developed [4]. A system of fiber diameter stabilization was developed, which allowed to reduce the surface roughness of the grown fibers to tens of nanometers [5].
It can be useful for development of various optical fiber sensors for use in chemically aggressive and high-temperature environments. In addition, some perovskite eutectics contain rod-like structure with single crystalline phases, which makes them attractive for photonic applications.

[1] Kurlov V. N. Sapphire: Properties, growth, and applications. In: Hashmi S, editor. Reference Module in Materials Science and Materials Engineering. Oxford: Elsevier; 2016. pp. 1-11. DOI: 10.1016/B978-0-12-803581-8.03681-X
[2] Llorca J, Orera VM. Directionally solidified eutectic ceramic oxides. Prog Mater Sci. 2006; 51: 711–809.
[3] Kurlov V.N., Stryukov D.O., Shikunova I.A. “Growth of sapphire and oxide eutectic fibers by the EFG technique” - Journal of Physics: Conference Series 673 (2016) 012017
[4] Rossolenko, S.N. Numerical Analysis of Liquid Menisci in the EFG Technique / S.N. Rossolenko, G.M. Katyba, I.N. Dolganova, I.A. Shikunova, D.O. Stryukov, K.I. Zaytsev, V.N. Kurlov // Crystal Growth. – London : IntechOpen, 2019. – Ch. 3. – P. 1–21. – ISBN: 978-953-51-6326-8
[5] Kurlov V.N., Shikunova I.A., and Stryukov D.O., RF Patent 2552436, 2015.



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Dmitry Stryukov
Osipyan Institute of Solid State Physics RAS, Chernogolovka, Russia
Russia

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