Electronic and Optical Properties of Borophene/GaN and Borophene/Zinc Oxide Van der Waals Heterostructures
Michael M. Slepchenkov, Dmitry A. Kolosov, Olga E. Glukhova, Saratov State University, Saratov, Russia
Abstract
At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the electronic and optical properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures.
Speaker
Michael M. Slepchenkov
Saratov State University
Russia
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