Novel designs and InGaAs-based materials for efficient THz detection
Denis V. Lavrukhin,1,2 Alexander E. Yachmenev,1 Rustam A. Khabibullin,1 Yurii G. Goncharov, 2 Igor E. Spektor, 2 Kirill I. Zaytsev, 2 Dmitry S. Ponomarev, 1,2
1 Institute of Ultra-High Frequency Semiconductor Electronics of the Russian Academy of Sciences, Moscow, Russia,
2 Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
Abstract
We report for the very first time on a PCA-detector which was developed using an artificially strained InGaAs/InAlAs superlattice heterostructure. The detector exhibits an increased signal-to-noise ratio above 70 dB, a broad detection bandwidth exceeding 3.5 THz, and can efficiently work with low and high probe pulse beams. We believe that strain-induced structures and detectors coupled to a fiber telecom wavelength laser could open a pathway toward the development of portable and cost-effective THz photoconductive devices for a variety of biomedical applications.
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Speaker
Ponomarev Dmitry
Institute of Ultra-High Frequency Semiconductor Electronics of the Russian Academy of Sciences
Russia
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