Co-deposited Si-Al thin films as a base material to decrease the reflectance in the millimeter-band frequencies
Anastasia M. Kartashova,1, Larisa D. Volkovoynova,1, Alexey A. Serdobintsev,1, Andrey V. Starodubov,1,2, Anton A. Kozyrev,3,1, Ilya O. Kozhevnikov,1, Anton M. Tolstoi,4, Anton M. Pavlov,1, Daniil N. Bratashov,1
1 Saratov State University, Saratov, Russia 2 Saratov Branch, V.A. Kotel’nikov Institute of Radio Engineering and Electronics RAS, Saratov, Russia 3 National Research Nuclear University MEPHI, Moscow, Russia 4 JSC "Saratovstroysteklo", Saratov, Russia
Abstract
Thin films of Al-Si alloys were deposited via magnetron co-sputtering. Optical measurement and SIMS investigations of deposited films revealed non homogeneous distribution of Al and Si through the film depth in the films with high Al content. This result allows to make low reflection coatings for V-band electromagnetic waves due to controllable conductivity profile inside the film.
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Anastasia M. Kartashova
Saratov State University
Russia
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Давидович Михаил Владимирович
Здравствуйте!
26% - это примерно порог перколяции. Связаны ли полученные свойства с ним?
Anastasia M. Kartashova
Здравствуйте!
Свойства зависят от того, пройден ли порог перколяции. Если порог пройден, то свойства ближе к металлическим, а если нет- к полупроводниковым.
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