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Laser induced crystallization of a-Si(Al) films using Ni absorption layer

Larisa D. Volkovoynova,1, Alexey A. Serdobintsev,1, Andrey V. Starodubov,1,2, Ilya O. Kozhevnikov,1, Anton M. Pavlov,1.

1 Saratov State University, Saratov, Russia 2 Saratov Branch, V.A. Kotel’nikov Institute of Radio Engineering and Electronics RAS

Abstract

Amorphous silicon films with various Al content were crystallized using near-IR laser and Ni absorption layer. Successful crystallization of silicon was confirmed with Raman spectra measurements. Distribution of Ni and Al trough the film depth were investigated by the SIMS. Elemental distribution profile showed diffusion of Al inside the film during crystallization. Al profile analysis can help to determine temperature gradients in the film during laser crystallization, which is useful for development of solar elements and microelectronics.

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Larisa D. Volkovoynova
Saratov State University
Russia

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