Round table: Abnormal shielding of the electric field as a widely used but little known phenomenon.
:A.G. Rokakh. The Chernishevski Saratov State University.
Abstract
The phenomenon of abnormally deep penetration of the electric field into the wide-band semiconductor is associated with the compensation by conductivity electrons of charge centers with deep levels, and manifests itself in particular when thin-film transistors work in channel enrichment mode.
Speaker
A(leksander).G. Rokakh.
Chernishevski Saratov State University.
Russia.
Discussion
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