Computer simulation of powerful microwave amplifiers based on domestic bipolar transistors.
Kalinin Artem, Khvalin Alexander
Abstract
The report presents the design of a powerful transistor amplifier and its main units: power dividers / adders for 2 channels, a basic two-stage amplifier module. The following tasks were solved: a microstrip power amplifier was designed on a 1 mm thick polycor substrate on a 2T937A bipolar transistor with a gain of 14-15 dB in the frequency range from 2 to 4 GHz. The output power is 22.5 W, the VSWR of the input and output is no more than 1.5. This device can be used as a pre-amplifier in the tasks of obtaining high values of UHF output power.
Speaker
Khvalin Alexander
Kalinin Artem
Russia
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