Optical and electronic properties of chalcogenide glasses of the Ge-Sb-Ga-Se system doped with Tb3+ and Dy3+
Transmittance and reflectance spectra of thin chalcogenide glass samples doped with active ions in various concentrations were measured in the range of wavelengths of 0.5 to 2 microns. Parameters of the fundamental absorption band edge have been derived from these spectra. Dependences of the bandgap energy and Urbach energy on the ions concentration have been obtained. Influence of the active ions on the optical losses in the samples have been investigated.
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