Photoconductive THz detector featuring an artificially strained InGaAs/InAlAs superlattice
D.V. Lavrukhin1,2, A.E. Yachmenev1, R.A. Khabibullin1,3, Yu.G. Goncharov2,
I.E. Spektor2, K.I. Zaytsev2,3, and D.S. Ponomarev1,2
1– Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Russia
2 – Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991, Russia
3 – Bauman Moscow State Technical University, Moscow 105005, Russia
Abstract
The multilayered photoconductive heterostructures have found their applications in a variety of IR and THz devices [1]. Nevertheless, the search for new functionalities of these layers, in particular, aimed at the development of reliable and affordable photoconductive detectors is still a hot issue.
Here, we report on a photoconductive THz antenna-based detector utilizing an artificially strained and undoped InGaAs/InAlAs superlattice (SL) heterostructure [2]. Using our laboratory THz time-domain spectroscopy system [3], we demonstrate the increase of the signal-to-noise ratio (S/N ratio) as well as the decrease in the noise level of the strain-induced detector compared to the detector based on a lattice-matched InGaAs/InAlAs SL. The strain-induced photoconductive detector shows the S/N ratio exceeding 60 dB and a broad frequency bandwidth of 3.5 THz at the excitation wavelengths of 800 nm and 1550 nm. We believe that the strain-induced SL-based PCA-detector coupled to a fiber telecom wavelength laser could open a pathway toward the development of portable and cost-effective THz photoconductive devices.
Speaker
Dmitry Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Russia
Russia
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